Silicon Carbide SiC MOSFET

Chongqing Pingchuang Institute of Semiconductors is a subsidiary of Rockwill Electric Group which is committed to developing new power semiconductor technology (especially the third generation semiconductor technology represented by silicon carbide SiC and gallium nitride GaN), advanced intelligent sensing technology and efficient energy conversion and control technology. For new energy, new energy vehicles, smart grid, rail transit, 5G communications, energy conservation and environmental protection and other fields to provide high-quality power semiconductor core components, intelligent sensing technology and system solutions.

SiC MOSFET has a substantial advantage in conduction losses, particularly at lower power outputs. Combining this switching-loss reduction with the lower overall conduction losses, it is clear that the SiC switch is a much more efficient device for high-power-conversion systems. 

Technical Data